Analytical analysis of nanoscale fully depleted Double-Gate MOSFETs including the hot-carrier degradation effects
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207210902894746
Reference14 articles.
1. Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects
2. An approach based on neural computation to simulate the nanoscale CMOS circuits: Application to the simulation of CMOS inverter
3. Design and simulation of a nanoelectronic DG MOSFET current source using artificial neural networks
4. An analytical approach based on neural computation to estimate the lifetime of deep submicron MOSFETs
5. Speed superiority of scaled double-gate CMOS
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