An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207210902847413
Reference25 articles.
1. An electrical model of a NPT-IGBT including transient temperature effects realized with PSpice device equations modeling
2. Electron and hole mobilities in silicon as a function of concentration and temperature
3. Auger coefficients for highly doped and highly excited silicon
4. An experimentally verified IGBT model implemented in the Saber circuit simulator
5. Physical CAD Model for High-Voltage IGBTs Based on Lumped-Charge Approach
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