Investigation of the proportional difference characteristics of MOSFETs-Reference-Cited by-同舟云学术

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Investigation of the proportional difference characteristics of MOSFETs

Published:2001-04 Issue:4 Volume:88 Page:383-393
ISSN:0020-7217
Container-title:International Journal of Electronics
language:en
Short-container-title:International Journal of Electronics

Author:

Xu Mingzhen,Tan Changhua,Yang Cunyu,Xie Bing

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00207210010018927

Reference11 articles.

1. ASTM. 1988a. Standard F617, Standard Method for Measuring MOSFET Linear Threshold Voltage.Annual Book of ASTM Standards, American Society for Testing and Materials

2. ASTM. 1988b. Standard F1096, Standard Method for Measuring MOSFET Saturated Threshold Voltage.Annual Book of ASTM Standards, American Society for Testing and Materials

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method;Chinese Physics;2006-09-21

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