Effect of precursor gas inlet position relative to hot wire cells in HWC-IP-PECVD systems for low-temperature graphene growth-Reference-Cited by-同舟云学术

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Effect of precursor gas inlet position relative to hot wire cells in HWC-IP-PECVD systems for low-temperature graphene growth

Published:2022-06-22 Issue:3 Volume:27 Page:131-137
ISSN:1432-8917
Container-title:Materials Research Innovations
language:en
Short-container-title:Materials Research Innovations

Author:

Yusuf Andi Momang¹²,Abidin Kurniati¹,Eliyana Ajeng¹,Usman Ida³,Malago Jasruddin Daud²,Noor Fatimah Arofiati¹^ORCID,Winata Toto¹

Affiliation:

1. Physics of Electronic Materials Research Division, Department of Physics, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Bandung, Indonesia

2. Physics of Materials Group, Department of Physics, Faculty of Mathematics and Natural Science, Universitas Negeri Makassar, Makassar, Indonesia

3. Department of Physics, Faculty of Mathematics and Natural Science, Universitas Halu Oleo Jalan H.E.A. Mokodompit, Kendari, Indonesia

Funder

This work is financially supported by Research, Community Services, and Innovation Program (PPMI) ITB research grant in the fiscal year 2022

Publisher

Informa UK Limited

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1080/14328917.2022.2091353

Reference38 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Ultrahigh electron mobility in suspended graphene

3. Electronic properties of graphene

4. Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene

5. Experimental observation of the quantum Hall effect and Berry's phase in graphene

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