MODELING OF PURE AND IN SITU DOPED POLYCRYSTALLINE SILICON DEPOSITION UN LPCVD REACTORS-Reference-Cited by-同舟云学术

MODELING OF PURE AND IN SITU DOPED POLYCRYSTALLINE SILICON DEPOSITION UN LPCVD REACTORS

Published:1992-01 Issue:1 Volume:7 Page:71-100
ISSN:1042-6914
Container-title:Materials and Manufacturing Processes
language:en
Short-container-title:Materials and Manufacturing Processes

Author:

Azzaro C.,Duverneuil P.,Couderc J.P.

Publisher

Informa UK Limited

Subject

Industrial and Manufacturing Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://www.tandfonline.com/doi/pdf/10.1080/10426919208947399

Reference25 articles.

1. Jensen , K.F.Proceedings of Ninth, International Conference on CVD, Electrochemical Society , p. 3 , ( 1984 ).

2. Analysis of Multicomponent LPCVD Processes: Deposition of Pure and In Situ Doped Poly‐Si

3. Modeling of LPCVD Reactors: Effect of Empty Inlet Tube

4. Vinante , G. , P. Duverneuil and J.P. Couderc ,Proceedings of the 7th European Conference on Chemical Vapor Deposition, Perpignan , France , 19 – 23 June 1989 , p.C 5 – 35

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