The 0·9 eV defect luminescence band in sputtered and other forms of plasma-deposited a-Si: H
Author:
Affiliation:
1. a Department of Physics , University of Sheffield , Sheffield , S3 7RH , England
2. b Department of Electrical and Electronic Engineering , University of Sheffield , Sheffield , S1 3JD , England
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418638308228275
Reference19 articles.
1. The effect of gap state density on the photoconductivity and photoluminescence of a-Si:H
2. Low energy excitation of photoluminescence in a-Si:H : Temperature and intensity effects
3. RECOMBINAISON RADIATIVE ET EFFETS DE SPIN DANS LE SILICIUM MICROCRISTALLIN POST-HYDROGENE PLASMA
4. Photoluminescence in sputtered amorphous Si:H alloys
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