Confined electron states associated with secondary X and L conduction band minima of GaAs–Ga1-xAlxAs (001) quantum-well and sawtooth superlattices
Author:
Affiliation:
1. a Department of Theoretical Physics , The University , Newcastle upon Tyne , U.K.
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418638508244274
Reference9 articles.
1. New Transient Electrical Polarization Phenomenon in Sawtooth Superlattices
2. Confined carrier quantum states in ultrathin semiconductor heterostructures
3. Effect of Inversion Symmetry on the Band Structure of Semiconductor Heterostructures
4. New electron states in GaAs-GaxAl1-xAs superlattice
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Normal-incidence linear and nonlinear infrared optical response ofL-valley quantum-well structures;Physical Review B;1994-09-15
2. Determination of the Valence Band Offset in GaAs/(Ga,Al)As Superlattices by Hot Electron Excitation Spectroscopy;MRS Proceedings;1993
3. Properties of electrons and excitons in graded quantum wells of Ga1-xAlxAs in an electric field;Journal of Physics: Condensed Matter;1989-10-16
4. Band structure and interband optical transitions in the sawtooth superlattice;Physical Review B;1987-11-15
5. Electronic structure and transport properties of GaAs‐GaAlAs superlattices in high perpendicular electric fields;Journal of Applied Physics;1987-07-15
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