Oxidation and interface states in a-Si: H
Author:
Affiliation:
1. a Xerox Palo Alto Research Centers , Palo Alto , California , 94304 , U.S.A.
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418638108222576
Reference18 articles.
1. Thickness dependent conductivity of n-type hydrogenated amorphous silicon
2. Hydrogen evolution and defect creation in amorphous Si: H alloys
3. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
4. Thermalization and recombination of excess carriers in A-Si:H
5. Porosity and oxidation of amorphous silicon films prepared by evaporation, sputtering and plasma-deposition
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