The Design and Analysis of a 25-Watt Broad-Band GaN HEMT-Based Power Amplifier
Author:
Affiliation:
1. Electronics Engineering Department, Defence Institute of Advanced Technology, Pune, India
2. Design Department of Garden Reach Shipbuilders and Engineers Limited, Kolkata, India
Publisher
Informa UK Limited
Link
https://www.tandfonline.com/doi/pdf/10.1080/03772063.2024.2350928
Reference12 articles.
1. K. Hayat A. Kashif T. Mehmood and M. Imran. “High performance gan hemt class-ab rf power amplifier for l-band applications ” 10th IBCAST pp. 389–392 2013.
2. M. Iqbal and A. Piacibello. “A 5w class-ab power amplifier based on a gan hemt for lte communication band ” MMS pp. 1–4 2016.
3. Development of Efficient High Power Amplifier With More Than an Octave Bandwidth
4. 22-watts power amplifier design using gan hemt;Shukla A.;IEEE MAPCON,2022
5. A. Shukla and K. P. Ray. “Design and development of gallium nitride based power amplifier for radar applications ” M. Tech Dissertation Dept. Elect. Eng. DIAT Pune India May 2022.
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