Superior Transient Response to Heavy-Ion Irradiation by N-Channel SOI-iFinFETs
Author:
Affiliation:
1. Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering,Computer Science Applications,Theoretical Computer Science
Link
https://www.tandfonline.com/doi/pdf/10.1080/03772063.2019.1696714
Reference13 articles.
1. FinFET Evolution Toward Stacked-Nanowire FET for CMOS Technology Scaling
2. Channel Stress and Ballistic Performance Advantages of Gate-All-Around FETs and Inserted-Oxide FinFETs
3. A Comparison of the SEU Response of Planar and FinFET D Flip-Flops at Advanced Technology Nodes
4. Angular Effects of Heavy-Ion Strikes on Single-Event Upset Response of Flip-Flop Designs in 16-nm Bulk FinFET Technology
5. Analysis of 45-nm Multi-Gate Transistors Behavior Under Heavy Ion Irradiation by 3-D Device Simulation
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