Design of a Class-F Power Amplifier with GaN Device Model and Reflection Data
Author:
Affiliation:
1. Department of Research and Development, Netas, Istanbul 34912, Turkey
2. Department of Electrical and Electronics Engineering, Istanbul University-Cerrahpasa, Istanbul 34320, Turkey
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering,Computer Science Applications,Theoretical Computer Science
Link
https://www.tandfonline.com/doi/pdf/10.1080/03772063.2020.1859950
Reference19 articles.
1. S. Gao, H. Xu, U. K. Mishra, and R. A. York, “MMIC class-F power amplifiers using field-plated AlGaN/GaN HEMTs,” in Compound Semiconductor Integrated Circuit Symposium,” Austin, 2006, pp. 81–4.
2. Bandwidth enhancement of an inverse class-F power amplifier based on LDMOS devices
3. A 0.4–2.3 GHz broadband power amplifier extended continuous class-F design technology
4. 30-W/mm GaN HEMTs by Field Plate Optimization
5. A modified class-F power amplifier with miniaturized harmonic control circuit
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2. Design of a broadband power amplifier based on high‐efficiency impedance space;International Journal of Circuit Theory and Applications;2023-03-30
3. High-efficiency class-F power amplifier based on double spiral defected ground structure;International Journal of Electronics;2023-01-04
4. Design and Optimization of 2.1 mW ULP Doherty Power Amplifier with Interstage Capacitances Using 65 nm CMOS Technology;Mathematical Problems in Engineering;2021-11-19
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