Added Noise in Oscillators Caused by the Transistor Base Emitter Breakdown Phenomenon

Author:

Griebel Wolfgang1,Rudolph Matthias1,Rohde Ulrich L.1

Affiliation:

1. Institute for Radio Frequency and Microwave Techniques, Brandenburg Technical University, Cottbus, Germany

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Computer Science Applications,Theoretical Computer Science

Reference30 articles.

1. X. Zhang , et al. “Comparison of the phase noise performance of HEMT and HBT based oscillators,” in IEEE MTT International Symposium Digest, Vol. 2, Orlando, FL, May 1995. pp. 697–700.

2. Bias-dependent noise up-conversion factor in HBT oscillators

3. A simple model of feedback oscillator noise spectrum

4. D. Scherer , “Design principles and test methods for low phase noise RF and microwave sources”, RF and Microwave Measurement Symposium and Exhibition, Hewlett-Packard, 1983.

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