Internal Amplification of Current Pulses Inside a Reverse-Biased Pnipn-Structure-Reference-Cited by-同舟云学术

Internal Amplification of Current Pulses Inside a Reverse-Biased Pnipn-Structure

Published:2003-01 Issue:2 Volume:23 Page:77-84
ISSN:0228-6203
Container-title:International Journal of Modelling and Simulation
language:en
Short-container-title:International Journal of Modelling and Simulation

Author:

Lukin K.A.¹,Cerdeira H.A.²,Colavita A.A.²,Maksymov P.P.¹

Affiliation:

1. Institute of Radiophysics and Electronics, National Academy of Sciences of Ukraine, Kharkov 61085, Ukraine;

2. The Abdus Salam International Centre for Theoretical Physics, P.O. Box 586, Trieste, Italy; e-mail: {, }

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Mechanics of Materials,Modelling and Simulation,Software

Link

https://www.tandfonline.com/doi/pdf/10.1080/02286203.2003.11442257

Reference4 articles.

1. K.A. Lukin, H.A. Cerdeira, & A.A. Colavita, Current oscillations in avalanche particle detectors with pnipn-structure,IEEE Transactions on Electron Devices, 43(3), 1996, 473–478.

2. K.A. Lukin, H.A. Cerdeira, & A.A. Colavita, Chaotic instability of currents in a reverse biased multilayered structure,Applied Physics Letters, 71(17), 1997, 2484–2486.

3. S.M. Sze,Physics of semiconductor devices(New York: Wiley-Interscience, 1981).

4. K.A. Lukin & P.P. Maksymov, A method for evaluating of semi-conductor structure with abrupt pn-junction,Radiophysics and Electronics, 4(1), 1999, 87–92.

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