A POTENTIAL AND NOVEL HIGH k DIELECTRICS SUITABLE FOR DRAM
Author:
Affiliation:
1. a Department of Chemistry and Chemical Engineering, Faculty of Engineering , Yamagata University , 4-3-16, Jonan, 992-8510, Yonezawa, Japan
2. b Wacom Electric Co. Ltd. , 568 Tanaka, Kawamoto-machi, Osato-gun, 369-1108, Saitama, Japan
Publisher
Informa UK Limited
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/10584580601085610
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1. Ferroelectric materials for 64 Mb and 256 Mb DRAMs
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3. Metal Organic Resin Derived Barium Titanate: I, Formation of Barium Titanium Oxycarbonate Intermediate
4. Preparation of barium strontium titanate thin film capacitors on silicon by metallorganic decomposition
5. Ferroelectric properties in epitaxially grown BaxSr1−xTiO3thin films
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