INVESTIGATION OF Sr-Ru-O/Ru MULTILAYER-ELECTRODES PREPARED BY MOCVD-Reference-Cited by-同舟云学术

INVESTIGATION OF Sr-Ru-O/Ru MULTILAYER-ELECTRODES PREPARED BY MOCVD

Published:2006-08-17 Issue:1 Volume:81 Page:249-260
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

MINAMIDATE JUN¹,NAGAI ATSUSHI¹,KUWABARA HIROKI¹,FUNAKUBO HIROSHI¹,KOO JUNE MO²,KIM SUK PIL²,PARK YOUNGSOO²

Affiliation:

1. a Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering , Tokyo Institute of Technology , G1-405, 4259 Nagatsuta-cho, Midori-ku, 226-8502, Yokohama, Japan

2. b Samsung Advanced Institute of Technology , Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, 449-712, Gyeonggi-Do, Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580600660538

Reference17 articles.

1. Growth and nanostructure of conformal ruthenium films by liquid-source metalorganic chemical vapor deposition

2. Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(dpm)3 Dissolved with Tetrahydrofuran Solvent

3. Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)2 with Tetrahydrofuran Solvent

4. Chemical Vapor Deposition of Ru and Its Application in (Ba,Sr)TiO3Capacitors for Future Dynamic Random Access Memories

5. Ruthenium Bottom Electrode Prepared by Electroplating for a High Density DRAM Capacitor

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3. Preparation of (111)-Oriented SrRuO3/Pt Electrodes for Pb(Zr,Ti)O3-Based Ferroelectric Capacitors: Grain Size and Roughness Impact;Japanese Journal of Applied Physics;2008-02-15