A NOVEL ATE (ADDITIONAL TOP-ELECTRODE) SCHEME FOR A 1.6 V FRAM EMBEDDED DEVICE AT 180 NM TECHNOLOGY
Author:
Affiliation:
1. a Advanced Technology Development Team, Semiconductor R&D Division , Samsung Electronics Co. , San #24, Nongseo-Dong, Kiheung-Gu, Yongin-City, Kyunggi-Do, Korea
Publisher
Informa UK Limited
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/10584580601077625
Reference8 articles.
1. Improvement in Reliability of 0.25 μ m 15F2 FRAM Using Novel MOCVD PZT Technology
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1. Overview of candidate device technologies for storage-class memory;IBM Journal of Research and Development;2008-07
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