The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films Applicable to Microwave Tunable Devices-Reference-Cited by-同舟云学术

The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films Applicable to Microwave Tunable Devices

Published:2004-01 Issue:1 Volume:66 Page:205-211
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

KIM J.-S.¹,PARK B. H.¹,CHOI T. J.²,Shin S. H.²,LEE J. C.²,LEE M. J.³,SEO S. A.³,YOO I. K.³

Affiliation:

1. a Department of Physics Konkuk University , Seoul, Korea , 143-706

2. b Department of Materials Science and Engineering Sung Kyun Kwan University , Suwon, Korea , 440-746

3. c Samsung Advanced Institute of Technology , Yongin, Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580490895112

Reference10 articles.

1. High nonlinearity of Ba0.6Sr0.4TiO3 films heteroepitaxially grown on MgO substrates

2. Effects of very thin strain layers on dielectric properties of epitaxial Ba0.6Sr0.4TiO3 films

3. Dielectric response and structural properties of TiO2-doped Ba0.6Sr0.4TiO3 films

4. Strain manipulation in BaTiO3/SrTiO3 artificial lattice toward high dielectric constant and its nonlinearity

5. Mg-doped Ba0.6Sr0.4TiO3 thin films for tunable microwave applications

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