A New Concept for Using Ferroelectric Transistors in Nonvolatile Memories-Reference-Cited by-同舟云学术

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A New Concept for Using Ferroelectric Transistors in Nonvolatile Memories

Published:2004-01 Issue:1 Volume:60 Page:45-58
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

FITSILIS MICHAEL¹,KOHLSTEDT HERMANN¹,WASER RAINER¹,ULLMANN MARC²

Affiliation:

1. a Research Center Jülich , D-52425, Jülich, Germany

2. b Bosch AG

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580490441197

Reference12 articles.

1. Recent progress of FET-type ferroelectric memories

2. Physics of the ferroelectric nonvolatile memory field effect transistor

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Contribution of Polymers to Electronic Memory Devices and Applications;Polymers;2021-10-31

2. Evaluation of Bulk and SOI FeFET Architecture for Non-Volatile Memory Applications;IEEE Journal of the Electron Devices Society;2019

3. High-performance solution-processed polymer ferroelectric field-effect transistors;Nature Materials;2005-02-20

4. Scaling of Silicon-Based Devices to Submicron Dimensions;Scanning Probe Microscopy: Characterization, Nanofabrication and Device Application of Functional Materials

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