Polarization Characteristics of High Valence Ion Doped Bismuth Lanthanum Titanate Ceramics-Reference-Cited by-同舟云学术

Polarization Characteristics of High Valence Ion Doped Bismuth Lanthanum Titanate Ceramics

Published:2004-01 Issue:1 Volume:65 Page:39-47
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

KIM JIN SOO¹,LEE HAI JOON²,KANG SUN HEE²,LEE SUN YOUNG²,KIM ILL WON²

Affiliation:

1. a Institute of Basic Science, University of Ulsan , Ulsan, Korea , 680-749

2. b Department of Physics, University of Ulsan , Ulsan, Korea , 680-749

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580490892728

Reference14 articles.

1. Ferroelectric Memories

2. Polycrystalline La0.5Sr0.5CoO3/PbZr0.53Ti0.47O3/ La0.5Sr0.5CoO3ferroelectric capacitors on platinized silicon with no polarization fatigue

3. Lanthanum-substituted bismuth titanate for use in non-volatile memories

4. Sol-Gel Route to Ferroelectric Layer-Structured Perovskite SrBi2Ta2O9 and SrBi2Nb2O9 Thin Films

5. Low-frequency dielectric relaxation and ac conduction of SrBi2Ta2O9 thin film grown by pulsed laser deposition

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