IMPRINT PROPERTIES OF YTTRIUM DOPED PZT THIN FILM-Reference-Cited by-同舟云学术

IMPRINT PROPERTIES OF YTTRIUM DOPED PZT THIN FILM

Published:2005-10 Issue:1 Volume:75 Page:173-179
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

CHENG W. X.¹,DING A. L.¹,QIU PINGSUN¹,HE XIYUN¹,ZHENG XINSEN¹

Affiliation:

1. a State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road , Shanghai, 200050, People's Republic of China

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580500414366

Reference4 articles.

1. Ferroelectric Memories

2. Evaluation of imprint in fully integrated (La,Sr)CoO3/Pb(Nb,Zr,Ti)O3/(La,Sr)CoO3 ferroelectric capacitors

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