Effect of Domain Nucleation on Switching of Ferroelectric Thin Films-Reference-Cited by-同舟云学术

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Effect of Domain Nucleation on Switching of Ferroelectric Thin Films

Published:2002-01 Issue:1 Volume:44 Page:125-134
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Zhang Hongzhou¹,Robert Marc²³⁴,Rabson Thomas A.¹³

Affiliation:

1. a Department of Electrical and Computer Engineering , Rice University , Houston, TX, 77251, USA

2. b Department of Chemical Engineering , Rice University , Houston, TX, 77251, USA

3. c Rice Quantum Institute , Rice University , Houston, TX, 77251, USA

4. d Center for Nanoscale Science and Technology , Rice University , Houston, TX, 77251, USA

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580215143

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