Excellent properties of 0.15 micrometer ferroelectric PZT capacitor with SRO electrodes for future Gbit-scale ferams-Reference-Cited by-同舟云学术

Excellent properties of 0.15 micrometer ferroelectric PZT capacitor with SRO electrodes for future Gbit-scale ferams

Published:2001-01 Issue:1-4 Volume:39 Page:41-50
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Kanaya Hiroyuki¹,Yoshinorikumura ¹,Taniguchi Yasuyuki²,Ozaki Toru¹,Yamakawa Koji³,Kunishima Iwao¹

Affiliation:

1. a Memory LSI Resarch & Development Center , Toshiba Corp. Semiconductor Company , 8, Shinsugita-cho, Isogo-ku, Yokohama, 235-8523, Japan

2. b Corporate Manufacturing Engineering Center , Toshiba Corp. , 33, Shinisogo-cho, Isogo-ku, Yokohama, 235-0017, Japan

3. c Process Resarch & Development Center , Toshiba Corp. Semiconductor Company , 8, Shinsugita-cho, Isogo-ku, Yokohama, 235-8523, Japan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580108011926

Reference2 articles.

1. Ferroelectric Properties of Pb(Zi, Ti)O3Capacitor with Thin SrRuO3Films within Both Electrodes

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoscale Investigation of MOCVD- Pb(Zr,Ti)O3 Thin Films Using Scanning Probe Microscopy;Nanoscale Phenomena in Ferroelectric Thin Films;2004

2. Preparation of Pb(Zr,Ti)O3 thin films by metalorganic chemical vapor deposition for low voltage ferroelectric memory;Journal of Applied Physics;2003-02