Effects of ILD & IMD characteristics on ferroelectric properties of fram devices-Reference-Cited by-同舟云学术

Effects of ILD & IMD characteristics on ferroelectric properties of fram devices

Published:2001-01 Issue:1-4 Volume:39 Page:3-11
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Lee Y. T.¹,Lee K. M.¹,An H. G.¹,Joo S. H.¹,Nam S. D.¹,Lee S. W.¹,Lee M. S.¹,Park K. S.¹,Park S. O.¹,Kang H. K.¹,Moon J. T.¹

Affiliation:

1. a Process Development Team, Semiconductor R&D Center , Samsung Electronics Co. , San #24, Nongseori, Yongin City, Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580108011922

Reference7 articles.

1. Ferroelectric Memories

2. An experimental 512-bit nonvolatile memory with ferroelectric storage cell

3. Effect ofSiO2Film Deposition on the Ferroelectric Properties of aPt/Pb(Zr,Ti)O3/PtCapacitor

4. Electrode dependence of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O3 and SrBi2Ta2O9 thin films

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integration technology for ferroelectric memory devices;Microelectronics Reliability;2003-03

2. Integration of Ferroelectric Random Access Memory Devices with Ir/IrO2/Pb(ZrxTi1-x)\barO3/Ir Capacitors Formed by Metalorganic Chemical Vapor Deposition-Grown Pb(ZrxTi1-x)O3;Japanese Journal of Applied Physics;2002-11-30

3. Integration technology of interlayer and intermetallic dielectrics for high density 32Mb FRAM;INTEGR FERROELECTR;2002