FERROELECTRIC FILM PHASE SHIFTER UNDER ELEVATED MICROWAVE POWER-Reference-Cited by-同舟云学术

FERROELECTRIC FILM PHASE SHIFTER UNDER ELEVATED MICROWAVE POWER

Published:2005-12 Issue:1 Volume:77 Page:139-149
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

KOZYREV A.¹,SAMOILOVA T.¹,SOLDATENKOV O.¹,BUSLOV O.¹,IVANOV A.¹,ZHANG NING-XIN²,REN TIAN-LING²,GINLEY D.³,KAYDANOVA T.³

Affiliation:

1. a Electrotechnical University, Prof. Popov Str., 5 , St.-Petersburg, 197376, Russia

2. b Institute of Microelectronics, Tsinghua University , Beijing, 100084, China

3. c National Renewable Energy Laboratory, 1617 Cole Blvd. , Golden, CO, 80228, USA

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580500414341

Reference10 articles.

1. Nonlinear response and power handling capability of ferroelectric BaxSr1−xTiO3 film capacitors and tunable microwave devices

2. Microwave two-pole resonant structure employed with ferroelectric films at high microwave power

3. Superconductor/nonlinear-dielectric bilayers for tunable and adaptive microwave devices

4. Microwave properties of (Ba,Sr)TiO3 ceramic films and phase-shifters on their base

5. Investigation of BaxSr1 − xTiO3 Film-Based Transmission Line for Direct Phase Modulation of Microwave Carrier

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1. The slow relaxation of capacitance in ferroelectric devices under electrical pulse influence;2007 European Microwave Conference;2007