PREPARATION AND CHARACTERIZATION OF NATURAL-SUPERLATTICE-STRUCTURED Bi2MoO6−Bi4Ti3O12(m = 1

PREPARATION AND CHARACTERIZATION OF NATURAL-SUPERLATTICE-STRUCTURED Bi2MoO6−Bi4Ti3O12(m = 1–3) THIN FILMS

Published:2006-11 Issue:1 Volume:79 Page:15-23
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

SHIBUYA AKIRA¹,NODA MINORU¹,OKUYAMA MASANORI¹,SAITO KEISUKE²

Affiliation:

1. a Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho , Toyonaka, 560-8531, Osaka, Japan

2. b BRUKER AXS K.K., 3-9-A Moriya-cho, Kanagawa-ku , Yokohama-shi, 221-0022, Kanagawa, Japan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580600657187

Reference8 articles.

1. A family of mixed-layer type bismuth compounds

2. Ferroelectric properties of intergrowth Bi4Ti3O12–SrBi4Ti4O15 ceramics

3. Natural-superlattice-structured Bi4Ti3O12–SrBi4Ti4O15 ferroelectric thin films

4. Natural-Superlattice-Structured Ferroelectric Bi4Ti3O12–SrBi4Ti4O15Thin Films Prepared by Pulsed Laser Deposition

5. Preparation and basic properties of ferroelectric thin films having a superlattice structure of 2 Bi3TiNbO9 units–1 Bi4Ti3O12 unit

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1. Preparation and electrical properties of a new-type intergrowth bismuth layer-structured (Bi3TiNbO9)1(Bi4Ti3O12)2 ceramics;Journal of Alloys and Compounds;2018-07

2. Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi₄Ti₄O₁₅-Bi₄Ti₃O₁₂ Thin Films;Advanced Materials Research;2011-02

3. Characteristics of Intergrown Superlattice Bismuth-Layered-Structure Ferroelectrics Thin Films Prepared by Sol-Gel Method;Advanced Materials Research;2011-02

4. Fabrication and ferroelectric properties of sol–gel derived 1–1 intergrowth-superlattice-structured Bi3TiNbO9-Bi4Ti3O12 thin films;Journal of Materials Science: Materials in Electronics;2010-08-21