METAL-ORGANIC CHEMICAL VAPOR DEPOSITION OF PbZrxTi1 –xO3 THIN FILMS ON Ir–Ru ALLOY ELECTRODES

Author:

SHIN SAGNMIN1,KOO JUNE-MO1,KIM SUKPIL1,CHUNG YOUNG SU1,LEE JUNE KEY1,CHOI CHEL-JONG1,LEE JANG HO1,PARK YOUNGSOO1,JANG NAKWON1,PARK SI-HYUN2

Affiliation:

1. a Samsung Advanced Institute of Technology , Suwon, 440-600, Korea

2. c Division of Photonic Engineering , Chosun University , Gwangju, 501-759, Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Novel Common Cell Via and Etch Stopper Technology for 0.25 μM 1T1C 32 MBIT FRAM

2. Current and future ferroelectric nonvolatile memory technology

3. Moise , T. S. Summerfelt , S. R. Xing , G. Colombo , L. Sakoda , T. Gilbert , S. R. Loke , A. Ma , S. Kavari , R. Wils , L. A. Hsu , T. Amano , J. Johnston , S. T. Vestyck , D. J. Russell , M. W. and Bilodeau , S. M. Int. Electron Device Meet. Tech. Dig. pp.940

4. Low Temperature MOCVD of Thin Film PZT

5. Cation Composition Control of MOCVD (Ba,Sr)TiO[sub 3] Thin Films along the Capacitor Hole

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