Implementation of a ferroelectric capacitor model using the preisach hysteresis theory
Author:
Affiliation:
1. a IMEC , Kapeldreef 75, B-3001 , Leuven , Belgium
2. b Research Center Jülich , D-52425 , Jülich , Germany
Publisher
Informa UK Limited
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/10584580108215700
Reference14 articles.
1. Switching Mechanism in Triglycine Sulfate and Other Ferroelectrics
2. Note on Ferroelectric Domain Switching
3. A circuit model for a thin film ferroelectric memory device
4. Switching kinetics in KNO3ferroelectric thin‐film memories
5. Detailed Study of Switching Current in Barium Titanate
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