Preparation and Electrical Properties of Sol-Gel Derived (1 − x)Pb(Zn1/3Nb2/3)O3-xPb(Zr0.4Ti0.6)O3(x = 0.6) Thin Films-Reference-Cited by-同舟云学术

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Preparation and Electrical Properties of Sol-Gel Derived (1 − x)Pb(Zn1/3Nb2/3)O3-xPb(Zr0.4Ti0.6)O3(x = 0.6) Thin Films

Published:2005-01-01 Issue:1 Volume:69 Page:173-181
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Youn Sang Chul¹,Choo Woong Kil¹,Kim Hyoj In²,Koh Kyung Shin³

Affiliation:

1. Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology , 373-1 Gusong-Dong, Yusong-Gu, Daejeon, Republic of Korea

2. Department of Material Science and Engineering, Chungnam National University , 220 Gung-dong, Yusong-Gu, Daejeon, Republic of Korea

3. Department of Chemistry, Chung-Ang University , 221 HeukSeok-Dong, Dongjak-Gu, Seoul, Republic of Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580590898631

Reference14 articles.

1. Dielectric and Piezoelectric Properties of 0.91Pb(Zn1/3Nb2/3)O3-0.09PbTiO3Single Crystals

2. Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals

3. Pressure stabilization and piezoelectric properties of polycrystalline perovskite PbZn1/3Nb2/3O3–PbTiO3

4. Fabrication of perovskite-based Pb(Zn1/3Nb2/3)O3 (PZN) thin films using charged liquid cluster beam

5. Preparation and properties of thin films by metalorganic chemical vapor deposition

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