Retention behavior of ferroelectric memory devices depending on the capacitor processes-Reference-Cited by-同舟云学术

Retention behavior of ferroelectric memory devices depending on the capacitor processes

Published:2001-01 Issue:1-4 Volume:33 Page:133-143
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Kim Jeong¹,Kim Chang Jung¹,Chung Ilsub¹

Affiliation:

1. a Microelectronics Lab, Samsung Advanced Institute of Technology , P.O. Box 111, Suwon, 440-600, Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580108222295

Reference12 articles.

1. Sharma , A. K. 1997. Semiconductor Memories, 387New York: IEEE.

2. Sharma , A. K. 1997. Semiconductor Memories, 393New York: IEEE.

3. Fatigue Parameters of Lead Zirconate Titanate Thin Films

4. Direct observation of region by region suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin film capacitors with Pt electrodes

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exceptional high temperature retention in Al0.93B0.07N films;Applied Physics Letters;2023-06-12

2. Strain effects on formation and migration energies of oxygen vacancy in perovskite ferroelectrics: A first-principles study;Journal of Applied Physics;2013-05-14

3. Effects of Storage Conditions on Imprint Characteristics in SrBi2Ta2O9Capacitors;Japanese Journal of Applied Physics;2006-09-22

4. Physics of thin-film ferroelectric oxides;Reviews of Modern Physics;2005-10-17

5. Dependences of Process-Induced Damage on Imprint Characteristics in SrBi2Ta2O9Capacitors;Japanese Journal of Applied Physics;2005-09-22