Effects of LaNiO3Buffer Layer Thickness on the Ferro- and Piezoelectric Properties of PZT Films-Reference-Cited by-同舟云学术

Effects of LaNiO3Buffer Layer Thickness on the Ferro- and Piezoelectric Properties of PZT Films

Published:2004-01 Issue:1 Volume:64 Page:125-133
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

KIM H.¹,KIM J.-H.¹,CHOO W. K.¹

Affiliation:

1. a Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology , Daejon, Republic of Korea , 305-701

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580490894131

Reference13 articles.

1. Topics in electronic ceramics

2. Effect of temperature and frequency on dielectric and ferroelectric properties of PZT thin films

3. Silicon-Based PbTiO3/Pb(Zr, Ti)O3/PbTiO3Sandwich Structure

4. Texture evolution and electrical properties of oriented PZT thin films

5. Electrical Characterization of Sol-Gel Derived PZT Films

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1. Formation of PZT Structures on Silicon;Bulletin of the Russian Academy of Sciences: Physics;2018-03

2. Integration of epitaxial Pb(Zr0.52Ti0.48)O3 films on GaN/AlGaN/GaN/Si(111) substrates using rutile TiO2 buffer layers;Thin Solid Films;2015-09

3. The effect of LaNiO3 buffer layer thickness on the electric properties of Pb(Zr0.53Ti0.47)O3 thin films deposited on titanium foils;Materials Letters;2007-06

4. Electrical properties of (001)-textured Pb(Zr,Ti)O3 thin films with different BaPbO3 thicknesses;Journal of Crystal Growth;2006-05