A Highly-Sensitive Ba(Ti1—xSnx)O3 Thin Film Dielectric Bolometer for Uncooled IR Sensor-Reference-Cited by-同舟云学术

A Highly-Sensitive Ba(Ti1—xSnx)O3 Thin Film Dielectric Bolometer for Uncooled IR Sensor

Published:2004-01 Issue:1 Volume:63 Page:35-40
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

NODA MINORU¹,NOMURA TETSUO²,POPOVICI DANIEL¹,MURAKAMI SHUUICHI³,OKUYAMA MASANORI¹

Affiliation:

1. a Graduate School of Engineering Science, Osaka University , 1-3 Machikaneyama-cho, Osaka, Japan , 560-8531

2. b Department of Photonics, Electronics and Information, Ritsumeikan University , 1-1-1 Noji-Higashi, Shiga, Japan , 525-8577

3. c Technology Research Institute of Osaka Prefecture , 2-7-1 Ayumino, Osaka, Japan , 594-1157

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580490458577

Reference3 articles.

1. Uncooled monolithic ferroelectric IRFPA technology

2. A new type of dielectric bolometer mode of detector pixel using ferroelectric thin film capacitors for infrared image sensor

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