STUDY ON ELECTRICAL PROPERTIES OF FLATTENED MOCVD PZT FILM BY CMP PROCESS-Reference-Cited by-同舟云学术

STUDY ON ELECTRICAL PROPERTIES OF FLATTENED MOCVD PZT FILM BY CMP PROCESS

Published:2005-10 Issue:1 Volume:75 Page:215-223
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

CHOI S. H.¹,BAE B. J.¹,SON Y. H.¹,LIM J. E.¹,YOO D. C.¹,IM D. H.¹,HEO J. E.¹,NAM S. D.¹,PARK J. H.¹,HONG C. K.¹,CHO H. K.¹,MOON J. T.¹

Affiliation:

1. a Process Development Team, Semiconductor R&D Division, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup , Yongin-Si, Kyungki-Do, Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580500414549

Reference12 articles.

1. Ferroelectric Memories

2. An experimental 512-bit nonvolatile memory with ferroelectric storage cell

3. Preparation of Pb(Zr,Ti)O3 thin films by metalorganic chemical vapor deposition for low voltage ferroelectric memory

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