Current Status of Bi-Based Precursors for Integrated Ferroelectrics-Reference-Cited by-同舟云学术

Current Status of Bi-Based Precursors for Integrated Ferroelectrics

Published:2004-01 Issue:1 Volume:62 Page:133-140
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

KATO KAZUMI¹,SUZUKI KAZUYUKI¹,TANAKA KIYOTAKA¹,FU DESHENG¹,NISHIZAWA KAORI¹,MIKI TAKESHI¹

Affiliation:

1. a National Institute of Advanced Industrial Science and Technology , 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya, Japan , 463-8560

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580490456218

Reference10 articles.

1. Fatigue-free ferroelectric capacitors with platinum electrodes

2. Air-Stable Solutions for the Low-Temperature Crystallization of Strontium Bismuth Tantalate Ferroelectric Films

3. Sol-Gel Route to Ferroelectric Layer-Structured Perovskite SrBi2Ta2O9 and SrBi2Nb2O9 Thin Films

4. Synthesis and Characterization of Bi4Ti3O12Thin Films by Sol-Gel Processing

5. Phase transition, ferroelectric, and dielectric properties of layer-structured perovskite CaBi3Ti3O12−δ thin films

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