Monte carlo simulation of transitions related to growth on (001) faces of Si and Ge
Author:
Publisher
Informa UK Limited
Subject
General Materials Science,Instrumentation
Link
http://www.tandfonline.com/doi/pdf/10.1080/01411599508200397
Reference25 articles.
1. Finite-temperature phase diagram of vicinal Si(100) surfaces
2. Monte Carlo simulations of Si(001) growth and reconstruction during molecular beam epitaxy
3. Microscopic mechanisms of reactions associated with silicon MBE: A molecular dynamics investigation
4. Stabilities of single-layer and bilayer steps on Si(001) surfaces
5. Origin of Reflection High-Energy Electron-Diffraction Intensity Oscillations during Molecular-Beam Epitaxy: A Computational Modeling Approach
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1. A Molecular Dynamics Simulation Study on the Initial Stage of Si(001) Oxidation Under Biaxial Strain;Journal of Nanoscience and Nanotechnology;2013-02-01
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