Author:
Hartmann A. J.,Gutleben C. D.,Foran G. J.,Whitby C. P.,Lamb R. N.,Isobe C.,Watanabe K.,Scott J. F.
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Structure and Device Characteristics of SrBi2Ta2O9-Based Nonvolatile Random-Access Memories
2. Fatigue-free ferroelectric capacitors with platinum electrodes
3. Characteristics of spin-on ferroelectric SrBi2Ta2O9 thin film capacitors for ferroelectric random access memory applications
4. Rodriguez, M., Boyle, T. J., Buchheit, C. D., Tissot, R. G., Drewien, C. A., Hernandez, B. A. and Eatough, M. O. Proceedings of the 8th International Symposium on Integrated Ferroelectrics. in press
5. Ami, T., Hironaka, C., Isobe, C., Nagel, N., Sugiyama, M., Ikeda, Y., Watanabe, K., Machida, A., Miura, K. and Tanaka, M. 1995.Metal-Organic Chemical Vapour Deposition of Electronic Ceramics IIEdited by: Desu, S. B., Beach, D. B. and van Buskirk, P. C. 195–200. Pittsburgh, PA Mater. Res. Soc. Proc. 415
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