Ba0.60Sr0.40TiO3 THIN FILMS FOR MICROWAVE PHASE SHIFTER DEVICES: THE INFLUENCE OF CRYSTALLIZATION TEMPERATURE ON THE ELECTRIC FIELD DEPENDENT PHASE SHIFT RESPONSE-Reference-Cited by-同舟云学术

Ba0.60Sr0.40TiO3 THIN FILMS FOR MICROWAVE PHASE SHIFTER DEVICES: THE INFLUENCE OF CRYSTALLIZATION TEMPERATURE ON THE ELECTRIC FIELD DEPENDENT PHASE SHIFT RESPONSE

Published:2010-03-18 Issue:1 Volume:111 Page:68-79
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

COLE M. W.¹,TOONEN R. C.¹,HIRSCH S. G.¹,NGO E.¹,ROMANOFSKY R. R.²,VAN KEULS FRED³,HUBBARD C.¹,IVILL M.¹,DEMAREE D.¹

Affiliation:

1. a U.S. Army Research Laboratory, Weapons and Materials Research Directorate , Aberdeen Proving Ground, MD, 21005, U.S.A.

2. b National Aeronautics and Space Administration Glenn Research Center Cleveland , OH, 4413, U.S.A.

3. c Ohio Aerospace Institute , Cleveland, OH, 44142, U.S.A.

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584581003591023

Reference20 articles.

1. Ferroelectric Materials for Microwave Tunable Applications

2. Structure–property relationships in pure and acceptor-doped Ba1−xSrxTiO3 thin films for tunable microwave device applications

3. Mg-doped Ba0.6Sr0.4TiO3 thin films for tunable microwave applications

4. High tunability barium strontium titanate thin films for rf circuit applications

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