Interstitial properties deduced from internal friction measurements on boron-implanted silicon-Reference-Cited by-同舟云学术

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Interstitial properties deduced from internal friction measurements on boron-implanted silicon

Published:1974-01 Issue:2 Volume:21 Page:119-133
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Frank W.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420157408230820

Reference17 articles.

1. Diffusion Mechanisms and Point Defects in Silicon and Germanium

2. Seeger, A. and Frank, W. 1973.Radiation Damage and Defects in Semiconductors, Conference Series Number 16 262London and Bristol: The Institute of Physics.

3. Energy Levels in Irradiated Germanium

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