Plastic deformation of gallium antimonide single crystals: Yield stresses, activation parameters and dislocation structures-Reference-Cited by-同舟云学术

Plastic deformation of gallium antimonide single crystals: Yield stresses, activation parameters and dislocation structures

Published:1990-08 Issue:2 Volume:62 Page:203-225
ISSN:0141-8610
Container-title:Philosophical Magazine A
language:en
Short-container-title:Philosophical Magazine A

Author:

Omri M'barek,Michel Jean-Pierre,George Amand

Publisher

Informa UK Limited

Subject

Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/01418619008243918

Reference29 articles.

1. Dislocations and Plastic Flow in the Diamond Structure

2. On the yield point of floating-zone silicon single crystals III. The evolution of the dislocation structure through the yield point at low temperature

3. Caillard, D., Clement, N., Couret, A., Androussi, Y., Lefebvre, A. and Vanderschaeve, G. 1987. Microscopy of Semiconducting Materials. Institute of Physics Conference Series No. 87. 1987. pp.361Bristol: Institute of Physics.

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correlation between the structural change and the electrical transport properties of indium nitride under high pressure;Phys. Chem. Chem. Phys.;2017

2. Plasticity of indium antimonide between −176°C and 400°C under hydrostatic pressure. Part II: Microscopic aspects of the deformation;Acta Materialia;2010-02

3. Indentation hardnesses of semiconductors and a scaling rule;Philosophical Magazine Letters;2002-10

4. Experimental and numerical results on the plastic deformation in uniaxial compression experiments at high temperature on Er-doped GaSb samples;Materials Science and Engineering: B;2002-06

5. Plastic deformation at high temperatures of pure and Mn-doped GaSb;Journal of Applied Physics;2001-11