Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium-Reference-Cited by-同舟云学术

Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium

Published:1999-05 Issue:5 Volume:79 Page:1145-1154
ISSN:0141-8610
Container-title:Philosophical Magazine A
language:en
Short-container-title:Philosophical Magazine A

Author:

Paszkowicz W.,Adamczyk J.,Krukowski S.,Leszczyński M.,Porowski S.,Sokolowski J. A.,Michalec M.,Łasocha W.

Publisher

Informa UK Limited

Subject

Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/01418619908210352

Reference34 articles.

1. Angus, J. C., Argoitia, A., Hayman, C. C., Wang, L., Dyck, J. S. and Kash, K. 1997.Materials Research Society Symposium Proceedings, Vol. 484, 149Pittsburgh: Materials Research Society.

2. Second-Order Pretransitional Effects in the High Pressure Phase Transition of Indium Nitride

3. Novel single source precursors for MOCVD of AlN, GaN and InN

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ab Initio Molecular Dynamics Insight to Structural Phase Transition and Thermal Decomposition of InN;International Journal of Molecular Sciences;2024-07-29

2. Pressure-dependent mode Grüneisen parameters and their impact on thermal expansion coefficient of zinc-blende InN;Journal of Materials Science;2023-05

3. Polarization Doping in a GaN-InN System—Ab Initio Simulation;Materials;2023-01-31

4. Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation;Physical Chemistry Chemical Physics;2022

5. Introduction to Gallium Nitride Properties and Applications;Nitride Semiconductor Technology;2020-08-03