HREM study of strained CdTe layer on rough GaAs(001) substrate grown by hot wall epitaxy-Reference-Cited by-同舟云学术

HREM study of strained CdTe layer on rough GaAs(001) substrate grown by hot wall epitaxy

Published:1994-08 Issue:2 Volume:70 Page:277-285
ISSN:0141-8610
Container-title:Philosophical Magazine A
language:en
Short-container-title:Philosophical Magazine A

Author:

Xuehua Wu,Tikhonova A. A.,Sklovsky D. E.,Kjselev N. A.,Ziqin Wu

Publisher

Informa UK Limited

Subject

Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/01418619408243185

Reference13 articles.

1. Heteroepitaxial growth of CdTe on GaAs by laser assisted deposition

2. Cullis, A. G., Chew, N. G., Hutchison, J. L., Irvine, S. J. C. and Giess, J. 1985.Inst. Phys. Conf Ser. No. 85, Microscopy of Semiconducting Materials, 1985, Edited by: Cullis, A. G. and Holt, D. B. Vol. 34, 29Bristol: Institute of Physics.

3. CdTe-GaAs(100) interface: MBE growth, rheed and XPS characterization

4. Hutchison, J. L., Lyster, M. and Booker, G. R. Inst. Phys. Conf. Ser., 100. Microscopy of Semiconducting Materials Conference. Oxford. pp.29Bristol: Institute of Physics.

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1. Strain effects and atomic arrangements of 60° and 90° dislocations near the ZnTe/GaAs heterointerface;Applied Physics Letters;2001-03-05

2. The dependence of the structural and optical properties on the CdTe epitaxial layer thicknesses in CdTe (111)/GaAs (100) heterostructures;Applied Surface Science;1999-02

3. Structural and optical properties of InSb epitaxial films grown on GaAs(100) substrates at low temperature;Applied Physics Letters;1999-01-18

4. The role and mechanism of a ZnTe buffer layer on the structural properties of the strained CdxZn1−xTe/ZnTe double quantum wells;Solid State Communications;1998-04

5. Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100)GaAs by metalorganic vapor phase epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-05