Dissociation of misfit dislocation nodes in (111)GeSi/Si interfaces-Reference-Cited by-同舟云学术

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Dissociation of misfit dislocation nodes in (111)GeSi/Si interfaces

Published:1993-12 Issue:6 Volume:68 Page:1251-1272
ISSN:0141-8610
Container-title:Philosophical Magazine A
language:en
Short-container-title:Philosophical Magazine A

Author:

Ernst F.

Publisher

Informa UK Limited

Subject

Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/01418619308222930

Reference34 articles.

1. Stacking Fault Energy in Silicon

2. Albrecht, M. and Strunk, H. P. 1991.Polycryst. Semiconductors II, Edited by: Werner, J. H. and Strunk, H. P. p. 503Berlin: Springer.

3. Crystal Defects and Crystalline Interfaces

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