Modelling oxygen vacancies at the Si(100)-SiO2 interface-Reference-Cited by-同舟云学术

Modelling oxygen vacancies at the Si(100)-SiO2 interface

Published:1997-05 Issue:5 Volume:75 Page:1435-1445
ISSN:0141-8610
Container-title:Philosophical Magazine A
language:en
Short-container-title:Philosophical Magazine A

Author:

Carniato S.¹,Boureau G.¹,Harding J. H.²

Affiliation:

1. a Laboratoire de Chimie Physique, Matière et Rayonnement, Université Pierre et Marie Curie , 11 rue Pierre et Marie Curie, 75231, Paris Cedex , 05 , France

2. b Materials Research Centre, Department of Physics and Astronomy , University College London , Gower Street, London , WC1E 6BT, England

Publisher

Informa UK Limited

Subject

Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418619708209865

Reference42 articles.

1. A model of interface defect states at Si/SiO2 amorphous (non-periodic) interfaces

2. Electronic structure of defect centers in SiO2

3. Surface and interface topography of amorphous SiO2/crystalline Si(100) studied by X-ray diffraction

4. Pb1 defect study and chemical characterization of the Si(001)SiO2 interface in oxidized porous silicon

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermochemistry and modeling in oxides;Journal of Alloys and Compounds;2001-06

2. Thermodynamic analysis of hole trapping in SiO2 films on silicon;Journal of Applied Physics;2001-01

3. Local density approximation and generalized gradient approximation calculations for oxygen and silicon vacancies in silica;The Journal of Chemical Physics;2000-06

4. Study of oxygen vacancies in silica using ultra soft pseudopotentials;Journal of Non-Crystalline Solids;1999-04

5. Constraint theory and defect densities at (nanometer SiO[sub 2]-based dielectric)/Si interfaces;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999