High-resolution electron microscopy observations of silicon/nickel silicide interfaces in a ∑ = 25 silicon bicrystal-Reference-Cited by-同舟云学术

High-resolution electron microscopy observations of silicon/nickel silicide interfaces in a ∑ = 25 silicon bicrystal

Published:1995-05 Issue:5 Volume:71 Page:1109-1123
ISSN:0141-8610
Container-title:Philosophical Magazine A
language:en
Short-container-title:Philosophical Magazine A

Author:

Portier X.,Rizk R.,Nouet G.,Allais G.

Publisher

Informa UK Limited

Subject

Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/01418619508236239

Reference33 articles.

1. Aucouturier, M., Broniatowski, A., Chari, A. and Maurice, J. L. 1989.Polycrystalline Semiconductors, Springer Proceedings in Physics Edited by: Moller, H. J., Strunk, H. P. and Werner, J. H. Vol. 35, 64

2. TEM analysis of near-coincidence grain boundaries in silicon

3. Bourret, A. and Rouviere, J. L. 1989.Polycrystalline Semiconductors, Springer Proceedings in Physics Edited by: Moller, H. J., Strunk, H. P. and Werner, J. H. Vol. 35, 8

4. Investigation of the atomic interface structure of mesotaxial Si/CoSi2(100) layers formed by high-dose implantation

5. Measurement of the grain-boundary states in semiconductors by deep-level transient spectroscopy

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