Study of domain walls and their effect on switching property in Pb(Zr, Ti)O3, SrBi2Ta2O9and Bi4Ti3O12
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://www.tandfonline.com/doi/pdf/10.1080/00150190108225123
Reference21 articles.
1. Domain Formation and Domain Wall Motions in Ferroelectric BaTiO3Single Crystals
2. Electrostatic Considerations in BaTiO3 Domain Formation during Polarization Reversal
3. Some Experiments on the Motion of 180° Domain Walls in BaTiO3
4. Theoretical Considerations on the Switching Transient in Ferroelectrics
5. High resolution study of domain nucleation and growth during polarization switching in Pb(Zr,Ti)O3 ferroelectric thin film capacitors
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1. Significantly enhanced piezoelectric performance in Bi4Ti3O12-based high-temperature piezoceramics via oxygen vacancy defects tailoring;Journal of Materiomics;2021-01
2. An optical method for characterizing domain wall motions and ferroelectric hysteresis in tetragonal Mn:Fe:KTN co-doped crystals;Journal of Materials Science;2018-01-12
3. In situ observation of the motion of ferroelectric domain walls in Bi4Ti3O12 single crystals;Journal of Applied Crystallography;2016-09-09
4. Types and configurations of domain walls in ferroelectric Bi4Ti3O12single crystals;Journal of Applied Crystallography;2015-07-08
5. Ferroelectric Properties;Ceramics Science and Technology;2014-05-23
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