Compatibility of Material Processing and Fabrication of Sol-Gel Derived PZT Based Devices
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://www.tandfonline.com/doi/pdf/10.1080/00150190902888681
Reference8 articles.
1. Futai, N., Matsumoto, K. and Shimoyama, I. Fabrication of high-aspect-ratio PZT thick film structure using SOL-GEL technique and SU-8 photoresist. Micro Electro Mechanical Systems IEEE. pp.168–171.
2. Surface characterization of (La1−x Sr x )MnO3 synthesized using a sol-gel process and solid-state reaction
3. Properties of epitaxial ferroelectric PbZr0.56Ti0.44O3 heterostructures with La0.5Sr0.5CoO3 metallic oxide electrodes
4. Preparation of PbZrxTi1 − xO3/La1 − xSrxCoO3 heterostructures using the sol-gel method and their electrical properties
5. Electrical Properties and Microstructures of PbZrTiO3Thin Films Prepared by Laser Annealing Techniques
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2. Voltage effect of corona poling on characteristics of PbZr x Ti 1−x O 3 (PZT) film;Ceramics International;2016-08
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