Impact of Lanthanum on PZT Resistance Degradation
Author:
Affiliation:
1. a François Rabelais University, Tours: Laboratoire de Microélectronique de Puissance
2. b STMicroelectronics, 16, Rue P. & M. Curie BP 7155 , 37071 , Tours Cedex 2
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/00150190802006806
Reference7 articles.
1. Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics
2. dc Electrical Degradation of Perovskite-Type Titanates: I, Ceramics
3. Resistance degradation in barium strontium titanate thin films
4. Wafer level reliability and leakage current modeling of PZT capacitors
5. EPFL PhD thesis;Stolichnov I.,2000
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2. Resistance degradation in donor-doped PZT ceramic stacks with Ag/Pd electrodes: I. Phenomenology of processes;Journal of the European Ceramic Society;2013-04
3. Effects of lanthanum doping on the preferred orientation, phase structure and electrical properties of sol–gel derived Pb1–3x/2Lax (Zr0.6Ti0.4)O3 thin films;Journal of Alloys and Compounds;2011-02
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