Investigation of CdTexand Cd1−xZnxTe Schottky Barrier Diode Structure Based γ-Ray Detectors
Author:
Publisher
Informa UK Limited
Subject
Industrial and Manufacturing Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
http://www.tandfonline.com/doi/pdf/10.1080/10426910701190873
Reference16 articles.
1. New trends in CdTe and CdZnTe detectors for X- and gamma-ray applications
2. Room temperature semiconductor detectors for safeguards measurements
3. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems
4. The basic component of the ISGRI CdTe γ-ray camera for space telescope IBIS on board the INTEGRAL satellite
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparison of the surfaces and interfaces formed for sputter and electroless deposited gold contacts on CdZnTe;Applied Surface Science;2018-01
2. Semiconductor Type Dependent Comparison of Electrical Characteristics of Pt/InP Structures Fabricated by Magnetron Sputtering Technique in the Range of 20–400 K;Nano-Micro Letters;2013-03
3. Cd1−xZnxTe thin films formed by non-aqueous electrochemical route;Electrochimica Acta;2008-12
4. Investigation of Modified Bridgman Grown CdTexCrystals and Their Characterization;Materials and Manufacturing Processes;2008-06-16
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