Statistical Characterization of Process-Induced Plasma Damage-Reference-Cited by-同舟云学术

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Statistical Characterization of Process-Induced Plasma Damage

Published:2009-04-06 Issue:6 Volume:24 Page:610-614
ISSN:1042-6914
Container-title:Materials and Manufacturing Processes
language:en
Short-container-title:Materials and Manufacturing Processes

Author:

Kim Byungwhan,Kwon Sang Hee,Kwon Kwang Ho,Baek Kyu-Ha,Lee Jin Ho,Kim Dong Hwan,May Gary S.

Publisher

Informa UK Limited

Subject

Industrial and Manufacturing Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://www.tandfonline.com/doi/pdf/10.1080/10426910902768915

Reference21 articles.

1. Plasma etching antenna effect on oxide-silicon interface reliability

2. Charging damage to gate oxides in an O2magnetron plasma

3. Threshold voltage shift of submicron p-channel MOSFET due to Si surface damage from plasma etching process

4. Degradation of submicron N-channel MOSFET hot electron reliability due to edge damage from polysilicon gate plasma etching

5. Damage to n-MOSFETs from electrical stress Relationship to processing damage and impact on device reliability

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1. Investigation of MRR and surface characterization using plasma process;Materials and Manufacturing Processes;2023-02-14

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