Impurity effects on the structure of amorphous silicon and germanium prepared in various ways-Reference-Cited by-同舟云学术

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Impurity effects on the structure of amorphous silicon and germanium prepared in various ways

Published:1973-02 Issue:2 Volume:27 Page:441-456
ISSN:0031-8086
Container-title:The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics
language:en
Short-container-title:The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics

Author:

Moss S. C.¹²,Flynn P.¹,Bauer L.-O.³

Affiliation:

1. a Energy Conversion Devices , Inc., Troy , Michigan , 48084 , U.S.A.

2. c Department of Physics , University of Houston , Cullen Boulevard , Houston , Texas 77004 , U.S.A

3. b Hughes Research Laboratories , Newport Beach , California , 92663 , U.S.A.

Publisher

Informa UK Limited

Link

https://www.tandfonline.com/doi/pdf/10.1080/14786437308227419

Reference23 articles.

1. Crystallization processes in a-Ge thin films

2. Structural, Optical, and Electrical Properties of Amorphous Silicon Films

3. Is there an intimate relation between amorphous and crystalline semiconductors?

4. ESR AND OPTICAL ABSORPTION STUDIES OF ION‐IMPLANTED SILICON

5. Phase separation in GeO–GeO2glasses

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystallization behavior and local order of amorphous GexTe1 − x films;Journal of Non-Crystalline Solids;1986-12

2. The Structure of Si and Ge Deposited by Ion Beam Sputtering;MRS Proceedings;1985

3. Correlation between electron spin resonance, electrical conductivity and optical absorption edge of co-evaporated thin films of the dielectric system SiO/V2O5;Journal of Materials Science;1984-11

4. Effects of the angle of deposition on short-range order in amorphous germanium;Thin Solid Films;1984-02

5. CORRELATION BETWEEN ELECTRON-SPIN RESONANCE, ELECTRICAL-CONDUCTIVITY AND OPTICAL-ABSORPTION EDGE OF CO-EVAPORATED THIN-FILMS OF THE DIELECTRIC SYSTEM SIO/V2O5;J MATER SCI;1984

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