Effect of impurities upon the nucleation of dislocation loops in quenched aluminium

Author:

Dimelfi R. J.1,Siegel R. W.1

Affiliation:

1. a Department of Materials Science , State University of New York at Stony Brook , Stony Brook , L.I., New York

Publisher

Informa UK Limited

Reference32 articles.

1. The electrical resistivity of dislocations

2. The formation and motion energies of vacancies in aluminium

3. Blatt , F. J. and Frankhauser , H. R. 1966. Calculations of the Properties of Vacancies and Interstitials, 109Washington: U.S. Government Printing Office. NBS misc. publ. 287

4. Stored energy and electrical resistivity in deformed metals

5. An experimental determination of the electrical resistivity of dislocations in aluminium

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Isochronal annealing study on n-irradiated single crystals and polycrystals of Mo;Philosophical Magazine A;1985-12

2. Electrical Resistivity of Aluminum and Manganese;Journal of Physical and Chemical Reference Data;1984-10

3. DISLOCATION SOURCES;Dislocation Modelling of Physical Systems;1981

4. Efficiency of vacancy annihilation at a surface and at dislocation loops in quenched aluminum;Acta Metallurgica;1979-05

5. Vacancy concentrations in metals;Journal of Nuclear Materials;1978-02

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