Effect of impurities upon the nucleation of dislocation loops in quenched aluminium
Author:
Affiliation:
1. a Department of Materials Science , State University of New York at Stony Brook , Stony Brook , L.I., New York
Publisher
Informa UK Limited
Link
https://www.tandfonline.com/doi/pdf/10.1080/14786437108227387
Reference32 articles.
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3. Blatt , F. J. and Frankhauser , H. R. 1966. Calculations of the Properties of Vacancies and Interstitials, 109Washington: U.S. Government Printing Office. NBS misc. publ. 287
4. Stored energy and electrical resistivity in deformed metals
5. An experimental determination of the electrical resistivity of dislocations in aluminium
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1. Isochronal annealing study on n-irradiated single crystals and polycrystals of Mo;Philosophical Magazine A;1985-12
2. Electrical Resistivity of Aluminum and Manganese;Journal of Physical and Chemical Reference Data;1984-10
3. DISLOCATION SOURCES;Dislocation Modelling of Physical Systems;1981
4. Efficiency of vacancy annihilation at a surface and at dislocation loops in quenched aluminum;Acta Metallurgica;1979-05
5. Vacancy concentrations in metals;Journal of Nuclear Materials;1978-02
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